Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots

Journal of Crystal Growth

Volumn 241, Issue 3, 2002, Pages 304-308

  Zhang, Z Y ^a   Xu, B ^a   Jin, P ^a   Meng, X Q ^a   Li, Ch M ^a   Ye, X L ^a   Li, D B ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Atomic force microscopy; A1. Low dimensional structures; A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

ATOMIC FORCE MICROSCOPY; GROUND STATE; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

CAP LAYERS; ENERGY SEPARATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036606830     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01309-X     Document Type: Article

References (11)

1. Multidimensional quantum well laser and temperature dependence of its threshold current