Boron diffusion in Si and SiC during 2.5 MeV proton irradiation at 500-850°C

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 279-283

  Kuznetsov, A Yu ^a,c   Janson, M ^a   Hallen A ^a   Svensson, B G ^a   Nylandsted Larsen, A ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b AARHUS UNIVERSITY   (Denmark)

^c INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

Boron; Diffusion; Irradiation; Point defects; Si; SiC

Indexed keywords

ACTIVATION ENERGY; ANNEALING; COMPOSITION EFFECTS; CRYSTAL ATOMIC STRUCTURE; POINT DEFECTS; PROTON IRRADIATION; RADIATION EFFECTS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMAL EFFECTS;

RADIATION ENHANCED DIFFUSION (RED);

DIFFUSION IN SOLIDS;

EID: 0033513775     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00740-X     Document Type: Article

References (14)

1. G.J. Dienes, A.C. Damask, J. Appl. Phys. 29 (1958) 1713.
2. The fact that atomic diffusion in solids is mediated by point defects is well established. See, for instance, J. Philibert, Atom movements; diffusion and mass transport in solids, Les Editions de Physique, Les Ulis, France, 1991.
3. P.M. Fahey, P.B. Griffin, J.D. Plummer, Rev. Mod. Phys. 61 (1989) 289.
4. P. Krause, H. Kerkow, K. Holldack, R. Wedell, Nucl. Instr. and Meth. B 67 (1992) 439.
5. B.J. Masters, E.F. Gorey, J. Appl. Phys. 49 (1978) 2717.
6. S. Loualiche, C. Lucas, P. Baruch, J.P. Galliard, J.C. Pfister, Phys. Status. Solidi. A 69 (1982) 663.
7. S.M. Hu, Mat. Sci. Eng. R 13 (1994) 105.
8. A.O. Konstantinov, Sov. Phys. Semicond. 26 (1992) 270.
9. A.V. Suvorov, I.O. Usov, V.V. Sokolov, A.A. Sokolova, Mat. Res. Soc. Symp. Proc. 301 (1996) 239.
10. D.J. Eaglesham, P.A. Stolk, H.-J. Gossmann, J.M. Poate, Appl. Phys. Lett. 65 (1994) 2305.
11. N.E.B. Cowern, K.T.F. Janssen, H.F.F. Jos, J. Appl. Phys. 68 (1990) 6191.
12. T.W. Simpson, I.V. Mitchell, J.-M. Baribeau, Mat. Res. Soc. Symp. Proc. 469 (1997) 277.
13. The irradiation at lower temperatures does not show any measurable enhancement neither.
14. G.D. Watkins, Phys. Rev. B 12 (1975) 5824.