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Volumn 100-101, Issue , 1996, Pages 425-430
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Atomically flat, ultra thin-SiO2/Si(001) interface formation by UHV heating
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CLEANING;
ELECTRON SCATTERING;
ELECTRON TRANSPORT PROPERTIES;
HEATING;
OXIDATION;
REACTION KINETICS;
SEMICONDUCTING SILICON;
SILICA;
SURFACE ROUGHNESS;
TRANSMISSION ELECTRON MICROSCOPY;
VACUUM APPLICATIONS;
INTERFACE HEATING;
INVERSION ELECTRON MOBILITY;
OXIDE GROWTH KINETICS;
PLANARIZATION;
ULTRAHIGH VACUUM HEATING;
INTERFACES (MATERIALS);
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EID: 0030564517
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/0169-4332(96)00313-3 Document Type: Article |
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Times cited : (10)
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References (7)
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