SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 31, Issue 5, 2002, Pages 466-471

The role of nucleation and heteroepitaxial processes in nanostructuring of Si

(3) Guliants, Elena A a Ji, C b Anderson, W A b

a WRIGHT PATTERSON AIR FORCE BASE (United States)

b the State University of New York (United States)

Author keywords

Heteroepitaxial; Nanostructure; NiSi2; Nucleation; Si

Indexed keywords

CHEMICAL RELAXATION; CRYSTAL LATTICES; ELECTRIC WIRE; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; NUCLEATION; RATE CONSTANTS; SELF ASSEMBLY; SPUTTER DEPOSITION; STRAIN;

HETEROEPITAXIAL PROCESSES;

SEMICONDUCTING SILICON;

EID: 0036575622 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-002-0101-z Document Type: Article

Times cited : (8)

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