SCOPUS 정보 검색 플랫폼

Surface and Interface Analysis

Volumn 33, Issue 5, 2002, Pages 381-393

Influence of surface composition and density on electron inelastic mean free paths in Ge

(5) Lesiak, B a Jablonski, A a Zemek, J b Jiricek, P b Pavluch, J c

a INSTITUTE OF PHYSICAL CHEMISTRY (Poland)

b INSTITUTE OF PHYSICS (Czech Republic)

c CHARLES UNIVERSITY (Czech Republic)

Author keywords

Chemical bonding state; Composition; Density; EPES; Ge; IMFP

Indexed keywords

ALGORITHMS; BACKSCATTERING; CARRIER CONCENTRATION; CHEMICAL BONDS; COMPOSITION; COMPUTER SIMULATION; ELECTRON SPECTROSCOPY; ENERGY GAP; GRAIN SIZE AND SHAPE; KINETIC ENERGY; MONTE CARLO METHODS; POROSITY; SPUTTER DEPOSITION; SURFACE ROUGHNESS; TEXTURES;

INELASTIC MEAN FREE PATHS (IMFP); RETARDING FIELD ANALYZERS (RFA); SURFACE LAYERS;

SEMICONDUCTING GERMANIUM;

EID: 0036573045 PISSN: 01422421 EISSN: None Source Type: Journal
DOI: 10.1002/sia.1220 Document Type: Article

Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.