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Volumn 60, Issue 1-3, 1997, Pages 191-196

On the anodic passivation of silicon in aqueous KOH solutions

Author keywords

Anodic oxide growth; Anodic passivation

Indexed keywords

CRYSTALLINE MATERIALS; MATHEMATICAL MODELS; PASSIVATION; POTASSIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; SINGLE CRYSTALS; SOLUTIONS; THERMAL EFFECTS;

EID: 0031146258     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(96)01441-0     Document Type: Article
Times cited : (15)

References (20)
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  • 2
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  • 5
    • 0027624222 scopus 로고
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    • Elwenspoek, M.1
  • 6
    • 0022043722 scopus 로고
    • Ellipsometric study of orientation-dependent etching of silicon in aqueous KOH
    • E.D. Palik, V.M. Bermudez and O.J. Glembocki, Ellipsometric study of orientation-dependent etching of silicon in aqueous KOH, J. Electrochem. Soc., 132 (1985) 871-884.
    • (1985) J. Electrochem. Soc. , vol.132 , pp. 871-884
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  • 8
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    • The mechanism of anisotropic, electrochemical silicon etching in alkaline solutions
    • IEEE, New York
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    • (1990) Tech. Digest, 1990 Conf. Solid-state Sensors and Actuators , pp. 86-91
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    • A Raman study of etching silicon in aqueous KOH
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.