Electrochemical etch-stop in TMAH without externally applied bias

Sensors and Actuators, A: Physical

Volumn 56, Issue 3, 1996, Pages 279-280

  French, P J ^a,b   Nagao, M ^a   Esashi, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Electrochemical etch stop; Tetramethyl ammonium hydroxide

Indexed keywords

ANISOTROPY; ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

BIAS VOLTAGE; BULK MICROMACHINED MEMBRANES; ELECTROCHEMICAL ETCH STOP METHOD; TETRAMETHYL AMMONIUM HYDROXIDE (TMAH);

MICROMACHINING;

EID: 0030232221     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(96)01331-3     Document Type: Letter

References (3)

1. 4NOH solutions, Proc. 6th Int. Conf. Solid-State Sensors and Actuators (Transducers '91), San Francisco, CA, USA, 24-28 June, 1991, pp. 811-814.
2. U. Schnakenberg, W. Benecke and P. Lange, TMAHW etchants for silicon micromachining, Proc. 6th Int. Conf. Solid-State Sensors and Actuators (Transducers '91), San Francisco, CA, USA, 24-28 June, 1991, pp. 815-818.
3. O. Tabata, R. Asahi, H. Funabashi, K. Shimaoka and S. Sugiyama, Anisotropic etching of silicon in TMAH solutions, Sensors and Actuators A, 34 (1992) 51-57.