A novel line-order of InAs quantum dots on GaAs

Journal of Crystal Growth

Volumn 241, Issue 1-2, 2002, Pages 69-73

  Meng, X Q ^a   Jin, P ^a   Xu, B ^a   Li, C M ^a   Zhang, Z Y ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Low dimensional structures; A1. Strain; A3. Molecular beam epitaxy; A3. Quantum dots; B2. Semiconducting III V

Indexed keywords

DEPOSITION; ELECTRONIC DENSITY OF STATES; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; SPECTRUM ANALYSIS; STRESSES; SUPERLATTICES;

LOW DIMENSIONAL STRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036566518     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01255-1     Document Type: Article

References (15)