Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

Applied Physics Letters

Volumn 75, Issue 8, 1999, Pages 1167-1169

  Jung, S K ^a   Hyon, C K ^a   Park, J H ^a   Hwang, S W ^b   Ahn, D ^b   Son, M H ^c   Min, B D ^c   Yong, Kim ^c   Kim, E K ^c  

^a Korea University   (South Korea)

^b University of Seoul   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; ELECTRON TUNNELING; NEGATIVE RESISTANCE; SEMICONDUCTING INDIUM COMPOUNDS;

INDIUM ARSENIDE; RESONANT TUNNELING; SELF-ASSEMBLED QUANTUM DOTS (SAQD);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032615375     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124631     Document Type: Article

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