Integration of high dielectric Ba0.5Sr0.5TiO3 films into amorphous TaSiN barrier layer structures

Materials Science in Semiconductor Processing

Volumn 5, Issue 2-3, 2002, Pages 233-236

  Wenger, Ch ^a   Albert, M ^a   Adolphi, B ^a   Heuer, H ^a   Bartha, J W ^a   Schlenkrich, F ^b  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b FRAUNHOFER INSTITUTE FOR CERAMIC TECHNOLOGIES AND SYSTEMS   (Germany)

Author keywords

High dielectric material; Oxygen diffusion barrier

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; DIELECTRIC FILMS; DIFFUSION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; FILM GROWTH; OXYGEN; PERMITTIVITY; POLYSILICON; SOL-GELS; SPUTTER DEPOSITION; TANTALUM; X RAY SPECTROSCOPY;

X RAY PHOTOEMISSION SPECTROSCOPY;

BARIUM COMPOUNDS;

EID: 0036557652     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00079-3     Document Type: Conference Paper

References (9)

1. Kotecki D.E., Baniecki J.D., Shen H., Laibowitz R.B., Saenger K.L., Lian J.J., Shaw T.M., Athavale S.D., Cabral C. Jr., Duncombe P.R., Gutsche M., Kunkel G., Park Y.-J., Wang Y.-Y., Wise R. IBM J Res Develop. 43:1999;367-382.
2. Hwang C.H. Mater Sci Eng. B56:1998;178-190.
3. Hong S., Bak H., An I., Kim O.K. Jpn J Appl Phys. 39:2000;1796-1800.
4. Tsai M.S., Sun S.C., Tseng T.-T. IEEE Trans Electron Dev. 46:1999;1829-1838.
5. Pokela P.J., Reid J.S., Kwok C.-K., Kolawa E., Nicolet M.-A. J Appl Phys. 70:1991;2828-2832.
6. Hara T., Kitamura T., Tanaka M., Kobayashi T., Sakiyama K., Onishi S., Ishihara K., Kudo J., Kino Y., Yamashita N. J Electrochem Soc. 143:1996;L264-L266.
7. Fischer D., Scherg T., Bauer J.G., Schulze H.-J., Wenzel C. Micro Eng. 50:2000;459-464.
8. Gao Y., He S., Engelhard M., Lea A.S., Finder J., Melnik B., Hance R.L. J Appl Phys. 87:2000;124-132.
9. Saha S., Krupanidhi S.B. J Appl Phys. 88:2000;3506-3513.