Operation of a 2500 V 150 A Si-IGBT/SiC diode module

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Lendenmann, H ^a   Johansson, N ^a   Mou, D ^a   Frischholz, M ^a   Astrand B ^a   Isberg, P ^a   Ovren, C ^a  

^a ABB CORPORATE RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CURRENT DENSITY; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON WAFERS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

SEMICONDUCTOR DIODES;

EID: 0343442325     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)

1. O. Kordina, et.al, Silicon Carbide, III-Nitrides and Related Materials. Stockholm, Sept. 1997.
2. T. Kimoto, et. al., IEEE Trans.Electron Devices March, vol. 46, pp. 471-7, 1999.
3. A. Ellison, PhD thesis. Linkopings Universitet, 1999.
4. K. Rottner, et. al, "SiC power deivces for high voltage applications," ECSCRM 1998.
5. A. Lebedev, "Deep level centers in SiC: A review," Semiconductors, vol. 33, pp. 107-30, 1999.
6. P. G. Neudeck, et. al., IEEE Trans.Electron Devices (USA) March, vol. 46, pp. 478-84, 1999.