Designing, physical simulation and fabrication of high-voltage (3.85 kV) 4H-SiC Schottky rectifiers processed on hot-wall and Chimney CVD films

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Wahab, Q ^a   Ellison, A ^a   Zhang, J ^a   Forsberg, U ^a   Duranova, E ^a   Henry, A ^a   Madsen, L D ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RECTIFIERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS;

SCHOTTKY RECTIFIERS;

SILICON CARBIDE;

EID: 18844474012     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)

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6. R. Raghunathan, D. Alok and B. J. Balliga, IEEE Trans. Electron Devices, 16, (1995) p. 226