Effects of hydrogen partial pressure on the structure and properties of sputtered silicon layers

Thin Solid Films

Volumn 348, Issue 1, 1999, Pages 74-78

  Achiq, A ^a   Rizk, R ^a   Gourbilleau, F ^a   Voivenel, P ^a  

^a UNIVERSITÉ DE CAEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; HYDROGEN; INFRARED SPECTROSCOPY; LIGHT ABSORPTION; PARTIAL PRESSURE; SILICON; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY;

HYDROGEN PARTIAL PRESSURE; HYDROGENATED NANOCRYSTALLINE SILICON; INFRARED ABSORPTION SPECTROSCOPY; OPTICAL ABSORPTION TECHNIQUES;

THIN FILMS;

EID: 0032648125     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00077-2     Document Type: Article

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