SCOPUS 정보 검색 플랫폼

Journal of Non-Crystalline Solids

Volumn 299-302, Issue , 2002, Pages 541-545

Probing localized states distributions in semiconductors by Laplace transform transient photocurrent spectroscopy

(5) Gueorguieva, M J a Main, C a Reynolds, S a Bruggemann R b Longeaud, C c

a UNIVERSITY OF ABERTAY DUNDEE (United Kingdom)

b Carl von Ossietzky Universität (United Kingdom)

c SUPELEC (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; COMPUTER SIMULATION; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC DENSITY OF STATES; LAPLACE TRANSFORMS; MATHEMATICAL MODELS; PHOTOCURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DOPING; SILANES; SINGLE CRYSTALS;

LOCALIZED STATE DISTRIBUTIONS;

SEMICONDUCTING SILICON;

EID: 0036540515 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(01)00967-X Document Type: Article

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.