Determination of free carrier recombination lifetime in amorphous semiconductors: Application to the study of iodine doping effect in arsenic triselenide

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 824-828

  Nagase, Takashi ^a   Naito, Hiroyoshi ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

Arsenic triselenide; Iodine doping; Recombination lifetime

Indexed keywords

AMORPHOUS MATERIALS; CARRIER CONCENTRATION; COMPUTER APPLICATIONS; DOPING (ADDITIVES); IODINE; PHOTOCONDUCTIVITY; SEMICONDUCTOR MATERIALS; TRANSIENTS;

AMORPHOUS SEMICONDUCTORS; COMPUTER GENERATED PHOTOCURRENT TRANSIENTS; MONOMOLECULAR RECOMBINATION LIFETIME;

ARSENIC COMPOUNDS;

EID: 0032064318     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00163-X     Document Type: Article

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