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Volumn 39, Issue 4 B, 2000, Pages 2452-2456

In situ controlled growth of low-temperature GaAs and its application for mode-locking devices

Author keywords

Low temperature GaAs; Mode locking; Molecular beam epitaxy; Reflectance difference spectroscopy; Ultrashort pulse laser; Wafer bonding

Indexed keywords

ANISOTROPY; ELECTRIC PROPERTIES; ELECTROOPTICAL EFFECTS; LASER MODE LOCKING; LOW TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; SPECTROSCOPY;

EID: 0033688041     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2452     Document Type: Article
Times cited : (7)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.