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Volumn 39, Issue 4 B, 2000, Pages 2452-2456
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In situ controlled growth of low-temperature GaAs and its application for mode-locking devices
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Author keywords
Low temperature GaAs; Mode locking; Molecular beam epitaxy; Reflectance difference spectroscopy; Ultrashort pulse laser; Wafer bonding
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Indexed keywords
ANISOTROPY;
ELECTRIC PROPERTIES;
ELECTROOPTICAL EFFECTS;
LASER MODE LOCKING;
LOW TEMPERATURE PROPERTIES;
MOLECULAR BEAM EPITAXY;
OPTICAL PROPERTIES;
SEMICONDUCTOR DEVICES;
SEMICONDUCTOR GROWTH;
SPECTROSCOPY;
LOW TEMPERATURE GALLIUM ARSENIDE;
REFLECTANCE DIFFERENCE SPECTROSCOPY;
ULTRASHORT PULSE LASER;
WAFER BONDING;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0033688041
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.39.2452 Document Type: Article |
Times cited : (7)
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References (10)
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