Defect control in As-rich GaAs

Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 951-956

  Specht, P ^a   Jeong, S ^b   Sohn, H ^a   Luysberg, M ^a   Prasad, A ^a   Gebauer, J ^c   Krause Rehberg, R ^c   Weber, E R ^a  

^a University of California Berkeley   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

Antisite defects; Ga vacancies; LT GaAs; Thermal stability; Ultrafast

Indexed keywords

BERYLLIUM; FERMI LEVEL; IONIZATION OF SOLIDS; POINT DEFECTS; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY;

CARRIER CAPTURE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031343133     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.951     Document Type: Article

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