Epitaxial growth of ZnS on bare and arsenic-passivated vicinal Si(100) surfaces

Journal of Applied Physics

Volumn 82, Issue 5, 1997, Pages 2251-2262

  Zhou, Xiaochuan ^a   Jiang, Shan ^a   Kirk, Wiley P ^a  

^a TEXAS A AND M UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001053523     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366031     Document Type: Article

References (25)

1. R. Houdré and H. Morkoç, CRC Crit. Rev. Solid State Mater. Sci. 16, 91 (1990).
2. X. Zhou, S. Jiang, F. Li, G. F. Spencer, R. T. Bate, and W. P. Kirk, in Proceedings of the 1995 IEEE Cornell Conference on Advanced Concepts in High Speed Semiconducting Devices and Circuits 1, 498 (1995).
3. X. Zhou, F. Li, G. F. Spencer, and W. P. Kirk, Mater. Res. Soc. Symp. Proc. 380, 3 (1995).
4. S. M. Sze, in Physics of Semiconductor Devices (Wiley, New York, 1981).
5. C. Maierhofer, S. Kulkarni, M. Alonso, T. Reich, and K. Horn, J. Vac. Sci. Technol. B 9, 2238 (1991).
6. M. Yokoyama, K. I. Kashiro, and S. I. Ohta, J. Cryst. Growth 81, 73 (1987).
7. X. Zhou and W. P. Kirk, Mater. Res. Soc. Symp. Proc. 318, 207 (1994).
8. L. T. Romano, R. D. Bringans, X. Zhou, and W. P. Kirk, Phys. Rev. B 52, 11 201 (1995).
9. T. Weser, A. Bogen, B. Konrad, R. D. Schnell, C. A. Schug, and W. Steinmann, in Proceedings of the Eighteenth International Conference on the Physics of Semiconductors, Stockholm, Sweden, 1986, edited by O. Engström (World Scientific, Singapore, 1987), pp. 97-100.
10. R. D. Bringans, D. K. Biegelsen, L.-E. Swartz, F. A. Ponce, and J. C. Tramontana, Phys. Rev. B 45, 13 400 (1992).
11. R. C. Henderson, J. Electrochem. Soc. 119, 772 (1972).
12. H. Kroemer, Mater. Res. Soc. Symp. Proc. 67, 3 (1986).
13. K. Sakamoto, T. Sakamoto, K. Miki, and S. Nagao, J. Electrochem. Soc. 136, 2705 (1989).
14. R. D. Bringans, CRC Crit. Rev. Solid State Mater. Sci. 17, 353 (1992).
15. R. M. Park and H. A. Mar, Appl. Phys. Lett. 48, 529 (1986).
16. P. Lao, W. C. Tang, K. C. Rajkumar, S. Guha, and A. Madhukar, J. Appl. Phys. 67, 6445 (1990).
17. S. Guha, J. M. DePuydt, G. E. Hfler, M. A. Haase, B. J. Wu, and H. Cheng, Appl. Phys. Lett. 63, 3023 (1993).
18. J. M. DePuydt, H. Cheng, J. E. Potts, T. L. Smith, and S. K. Mohapatra, J. Appl. Phys. 62, 4756 (1987).
19. M. Copel, M. C. Ruter, E. Kaxiras, and R. M. Tromp, Phys. Rev. Lett. 63, 632 (1989).
20. (Unpublished).
21. D. J. Chadi, Phys. Rev. Lett. 59, 1691 (1987).
22. J. E. Griffith, G. P. Kochanski, J. A. Kubby, and P. E. Wierenga, J. Vac. Sci. Technol. A 7, 1914 (1989).
23. S. Takeuchi, K. Suzuki, K. Maeda, and H. Iwanaga, Philos. Mag. A 50, 171 (1984).
24. Private communication with R. D. Bringans of Xerox Cooperation.
25. R. D. Bringans, D. K. Biegelsen, and L.-E. Swartz, Phys. Rev. B 44, 3054 (1991).