Fabrication of epitaxial In2O3(ZnO)5 thin films by RF sputtering and their characterization by X-ray and electron diffraction techniques

Journal of Crystal Growth

Volumn 237-239, Issue 1 4 I, 2002, Pages 558-563

  Ohashi, Naoki ^a   Ogino, Tsuyoshi ^a,b   Sakaguchi, Isao ^a   Hishita, Shunichi ^a   Komatsu, Mamabu ^a   Takenaka, Tadashi ^c   Haneda, Hajime ^a,b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

A1. X ray diffraction; A3. Superlattices; B1. Oxides; B2. Semiconducting materials

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; MAGNETRON SPUTTERING; PARTIAL PRESSURE; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

POST-ANNEALING EFFECTS;

THIN FILMS;

EID: 0036530801     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01980-7     Document Type: Article

References (15)