Global temperature field simulation of the vapour pressure controlled Czochralski (VCZ) growth of 3″-4″ gallium arsenide crystals

Journal of Crystal Growth

Volumn 198-199, Issue PART I, 1999, Pages 349-354

  Bottcher K ^a   Rudolph, P ^a   Neubert, M ^a   Kurz, M ^b   Pusztai, A ^b   Muller G ^b  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Finite volume method; GaAs; Global simulation; Heat transfer; Thermal stress field; Vapour pressure controlled Czochralski (VCZ) method

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; FINITE VOLUME METHOD; HEAT CONDUCTION; HEAT RADIATION; STRESS ANALYSIS;

THERMOELASTIC STRESS; VAPOR PRESSURE CONTROLLED CZOCHRALSKI (VCZ) GROWTH; VON-MISES STRESSES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 18344413099     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00996-8     Document Type: Article

References (7)

1. P. Rudolph, M. Neubert, S. Arulkumaran, M. Seifert, Crys. Res. Technol. 32 (1997) 35.
2. M. Tatsumi, T. Kawase, Y. Iguchi, K. Fujita, M. Yamada, in: M. Godlewski (Ed.), Semi-insulating III-V Materials, World Scientific, Singapore, 1994, p. 11.
3. M. Neubert, P. Rudolph, Seifert, in: M. Melloch, M.A. Reed (Eds.), 1997 IEEE Int. Symp. on Compound Semiconductors, Inst. Phys. Publ., Bristol, 1998, p. 53.
4. M. Kurz, A. Pusztai, G. Müller, J. Crystal Growth 198/199 (1999) 101.
5. A.G. Ostrogorsky, K.H. Yao, A.F. Witt, J. Crystal Growth 84 (1987) 460.
6. A.S. Jordan, A.R. von Neida, R. Caruso, J. Crystal Growth 76 (1986) 243.
7. A.S. Jordan, J. Crystal Growth 49 (1980) 631.