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Volumn 237-239, Issue 1 4 II, 2002, Pages 1065-1069

Reduction of threading dislocation density in AlXGa1-XN grown on periodically grooved substrates

(6) Mochizuki, Shingo a Detchprohm, Theeradetch a Sano, Shigekazu a Nakamura, Tetsuya a Amano, Hiroshi a Akasaki, Isamu a

a MEIJO UNIVERSITY (Japan)

Author keywords

A1. Transmission electron microscopy; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; LOW TEMPERATURE EFFECTS; MASKS; OPTOELECTRONIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

HETEOREPITAXIAL LATERAL OVERGROWTH TECHNIQUES; THREADING DISLOCATIONS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0036530429 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02128-5 Document Type: Article

Times cited : (13)

References (15)

1
- 0023040588
- (1986) Appl. Phys. Lett. , vol.48 , pp. 353
- Amano, H.¹ Sawaki, N.² Akasaki, I.³ Toyoda, Y.⁴

2
- 0025432263
- (1990) J. Electrochem. Soc. , vol.137 , pp. 1639
- Amano, H.¹ Kitoh, M.² Hiramatsu, M.³ Akasaki, I.⁴

3
- 0031223973
- (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 5393
- Akasaki, I.¹ Amano, H.²

4
- 84883188181
- (1989) Jpn. J. Appl. Phys. , vol.28 , pp. L2112
- Amano, H.¹ Kitoh, M.² Hiramatsu, K.³ Sawaki, N.⁴ Akasaki, I.⁵

5
- 0029405049
- (1995) Jpn. J. Appl. Phys. , vol.34 , pp. L1517
- Akasaki, I.¹ Amano, H.² Sota, S.³ Sakai, H.⁴ Tanaka, T.⁵ Koide, M.⁶

6
- 0029779805
- (1996) Jpn. Appl. Phys. , vol.35 , pp. L74
- Nakamura, S.¹ Snoh, M.² Nagahama, S.³ Iwasa, N.⁴ Yamada, T.⁵ Matsushita, T.⁶ Kioku, H.⁷ Sugimoto, Y.⁸

7
- 0031187047
- (1997) Jpn. J. Appl. Phys. , vol.36 , pp. L899
- Usui, A.¹ Sunakawa, H.² Sakai, A.³ Yamaguchi, A.A.⁴

8
- 0032023331
- (1998) Jpn. J. Appl. Phys. , vol.37 , pp. L316
- Iwaya, M.¹ Takeuchi, T.² Yamaguchi, S.³ Wetzel, C.⁴ Amano, H.⁵ Akasaki, I.⁶

9
- 33751323426
- (2000) Mater. Res. Soc. Symp. Proc. , vol.595 , pp. W281
- Nitta, S.¹ Kashima, T.² Kariya, M.³ Yukawa, Y.⁴ Yamaguchi, S.⁵ Amano, H.⁶ Akasaki, I.⁷

10
- 0002272655
- 31st national conference on crystal growth
- (2000) J. Jpn. Assoc. Crystal Growth. , vol.27 , pp. 26
- Detchprohm, T.¹ Yano, M.² Nakamura, R.³ Sano, S.⁴ Amano, H.⁵ Akasaki, A.⁶

11
- 0000175276
- Nagoya, Japan, 2000, The Institute of Pure and Applied Physics, Tokyo
- (2000) Proceeding of the International Workshop Nitride Semiconductors , pp. 292
- Yano, M.¹ Detchprohm, T.² Nakamura, R.³ Sano, S.⁴ Mochizuki, S.⁵ Nakamura, T.⁶ Amano, H.⁷ Akasaki, I.⁸

12
- 85021435315
- 5.7, to be published
- (2000) Mater. Res. Soc. Symp. Proc. G
- Detchprohm, T.¹ Yano, M.² Nakamura, R.³ Sano, S.⁴ Mochizuki, S.⁵ Nakamura, T.⁶ Amano, H.⁷ Akasaki, I.⁸

13
- 0035862480
- (2001) Jpn. J. Appl. Phys. , vol.40 , pp. L16
- Detchprohm, T.¹ Yano, M.² Sano, S.³ Nakamura, R.⁴ Mochizuki, S.⁵ Nakamura, T.⁶ Amano, H.⁷ Akasaki, I.⁸

14
- 0001236278
- (2000) Appl. Phys. Lett. , vol.77 , pp. L3233
- Ashby, C.I.H.¹ Mitchell, C.C.² Han, J.³ Missert, N.A.⁴ Provencio, P.P.⁵ Follstaedt, D.M.⁶ Peake, G.M.⁷ Griego, L.⁸

15
- 0001172631
- (2001) Appl. Phys. Lett. , pp. L727
- Strittmatter, A.¹ Rodt, S.² Reißmann, L.³ Bimberg, D.⁴ Schröder, H.⁵ Obermeier, E.⁶ Riemann, T.⁷ Christen, J.⁸ Krost, A.⁹

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