Proposed sample structure for marked enlargement of excimer-laser-induced lateral grain growth in Si thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4, 2002, Pages 1909-1914

  Yeh, Wenchang ^a,b   Matsumura, Masakiyo ^a,b,c  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c Advanced LCD Technologies Development Center Co Ltd   (Japan)

Author keywords

Crystallization; Excimer laser; Grain size; Silicon; Thin Si film; Thin film transistor

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; EXCIMER LASERS; GRAIN GROWTH; HEAT LOSSES; HEAT STORAGE; HEAT TRANSFER; LASER BEAM EFFECTS; THERMAL CONDUCTIVITY; THERMAL EFFECTS; THIN FILM TRANSISTORS; ULTRATHIN FILMS;

EXCIMER LASER INDUCED LATERAL GRAIN GROWTH; LATERAL HEAT LOSS; PHOTOSENSITIVE CAPPING LAYER; SINGLE SHOT IRRADIATION; ULTRATHINNING;

SEMICONDUCTING SILICON;

EID: 0036529626     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1909     Document Type: Article

References (15)