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Volumn 40, Issue 5 A, 2001, Pages 3096-3100
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Effects of a low-melting-point underlayer on excimer-laser-induced lateral crystallization of Si thin-films
a
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Author keywords
Excimer laser annealing; Gradient method; Lateral crystallization; Poly crystalline Si; Thin film solar cells
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Indexed keywords
ANNEALING;
CHROMIUM;
CRYSTALLIZATION;
EUTECTICS;
EXCIMER LASERS;
GRADIENT METHODS;
INTERFACES (MATERIALS);
NUCLEATION;
POLYSILICON;
SOLAR CELLS;
EXCIMER-LASER ANNEALING;
ULTRATHIN METALLIC UNDERLAYERS;
ULTRATHIN FILMS;
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EID: 0035328672
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.40.3096 Document Type: Article |
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Times cited : (7)
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References (15)
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