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IEE Proceedings: Circuits, Devices and Systems

Volumn 149, Issue 2, 2002, Pages 136-143

Experimental 128-kbit ferroelectric memory with 1012 endurance and 10-year data retention

(1) Chung, Y a

a Ramtron International Corporation (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITOR STORAGE; CHEMICAL MECHANICAL POLISHING; CMOS INTEGRATED CIRCUITS; DATA PROCESSING; DECODING; ELECTRIC POTENTIAL; FERROELECTRIC DEVICES; FERROELECTRIC MATERIALS; MICROPROCESSOR CHIPS; POLARIZATION; PROM;

CELL PROCESSING TECHNOLOGY; DATA RETENTION; FERROELECTRIC MEMORY; FERROELECTRIC RANDOM ACCESS MEMORY; FERROELECTRIC REFERENCE VOLTAGE GENERATOR;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0036529241 PISSN: 13502409 EISSN: None Source Type: Journal
DOI: 10.1049/ip-cds:20020243 Document Type: Article

Times cited : (7)

References (9)

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3
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4
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8
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9
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.