256kb nonvolatile ferroelectric memory at 3V and 100ns

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 1994, Pages 268-269

  Sumi, Tatsumi ^a   Moriwaki, Nobuyuki ^a   Nakane, George ^a   Nakakuma, Tetsuji ^a   Judai, Yuji ^a   Uemoto, Yasuhiro ^a   Nagano, Yoshihisa ^a   Hayashi, Shinichiro ^a   Azuma, Masamichi ^a   Fujii, Eiji ^a   Katsu, Shin ich ^a   Otsuki, Tatsuo ^a   McMillan, Larry ^a   de Araujo, Carlos Paz ^a   Kano, Gota ^a  

^a Matsusita Electronics Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; FERROELECTRIC DEVICES; MICROELECTRONICS; PERFORMANCE;

MICROCONTROLLER CHIPS; NONVOLATILE FERROELECTRIC MEMORY; ROW ADDRESS BUFFERS; ROW PRECODERS; WORDLINE BOOST CIRCUITS;

NONVOLATILE STORAGE;

EID: 0028115217     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)