Investigation of Si and Ge growth on Si3N4/Si

Materials Characterization

Volumn 48, Issue 2-3, 2002, Pages 189-194

  Wang, Lei ^a,b   Wang, Xue Sen ^a   Tang, Jing Chang ^b   Cue, Nelson ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

Germanium; LEED; Silicon; Silicon nitride; STM

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COALESCENCE; CRYSTALLINE MATERIALS; LOW ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SILICON NITRIDE; SUBSTRATES; SURFACES;

SILICON GROWTH;

SEMICONDUCTOR GROWTH;

EID: 0036526407     PISSN: 10445803     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1044-5803(02)00238-3     Document Type: Conference Paper

References (15)

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9. Adsorption and reaction on NO on Si(111) studied by scanning tunneling microscopy
10. 2 electron cyclotron resonance plasma: An X-ray photoemission study
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14. Surfactant induced reversible changes of surface morphology
15. Surfactant- induced layer-by-layer growth of Ag on Ag (111)