Investigation into the role of low-temperature GaN in n-GaN/InGaN/p-GaN double-heterostructure light-emitting diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 5 A, 2000, Pages 2512-2515

  Youn, Doo Hyeb ^a   Son, Sung Jin ^a   Lee, Young Ju ^a   Hwang, Soon Won ^a   Yang, Jung Ja ^a   Lee, Kang Jae ^a   Kim, Jong Hi ^a   Jo, Jang Yeon ^a   Yoo, Ji Beom ^b   Choi, Chul Jong ^c   Seong, Tae Yeon ^c  

^a Optel Semiconductor Co LTD   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Cathodoluminescence; Defects; GaN; InGaN; Low temperature GaN; Transmission electron microscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); EVAPORATION; HETEROJUNCTIONS; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

INDIUM GALLIUM NITRIDE;

LIGHT EMITTING DIODES;

EID: 0033723429     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2512     Document Type: Article

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