Operation of a ballistic heterojunction permeable base transistor

IEEE Transactions on Electron Devices

Volumn 44, Issue 11, 1997, Pages 1829-1836

  Wernersson, Lars Erik ^a   Litwin, Andrej ^a   Samuelson, Lars ^a   Xu, Hongqi ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HOT CARRIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

BALLISTIC HETEROJUNCTION PERMEABLE BASE TRANSISTORS (HPBT); HOT ELECTRON INJECTION; UNITY CURRENT GAIN CUTOFF FREQUENCY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031275760     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.641349     Document Type: Article

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