Metal-semiconductor heterostructures in 3D for electron storage and vertical injection

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1599-1603

  Wernersson, L E ^a   Carlsson, N ^a   Gustafson, B ^a   Litwin, A ^a   Montelius, L ^a   Pettersson, H ^a   Samuelson, L ^a   Seifert, W ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTAL LATTICES; ELECTRIC CONTACTS; ELECTRON EMISSION; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

ELECTRON CAPTURE; VERTICAL INJECTION;

HETEROJUNCTIONS;

EID: 0032118441     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00078-1     Document Type: Article

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12. Wernersson, L.-E., Carlsson, N., Gustafson, B., Litwin, B. and Samuelson, L., submitted for publication.