Preparation of Ta2Al intermetallic compound films and their application as diffusion barriers to Cu penetration

Thin Solid Films

Volumn 278, Issue 1-2, 1996, Pages 6-11

  Ohta, Akira ^a,b   Noya, Atsushi ^a   Takeyama, Mayumi ^a   Taguchi, Masahiro ^a,c   Sase, Touko ^a   Sasaki, Katsutaka ^a  

^a KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

^b HITACHI LTD   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Contacts; Copper; Diffusion; Metallization; Silicides

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; COPPER; DIFFUSION IN SOLIDS; INTERFACES (MATERIALS); INTERMETALLICS; SILICON; TANTALUM COMPOUNDS; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

COPPER PENETRATION; DIFFUSION BARRIERS; INTERFACIAL REACTIONS;

THIN FILMS;

EID: 0030146110     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08119-4     Document Type: Article

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