Optical and electrical properties of InAlAs/AlAsSb type II quantum well structures grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 328-331

  Yoshimatsu, K ^a   Kawamura, Y ^a   Kurisu, H ^a   Kamada, A ^a   Naito, H ^a   Inoue, N ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

InAlAs AlAsSb; MBE; Type II

Indexed keywords

CRYSTAL LATTICES; ELECTRIC ACCIDENTS; ELECTRON TUNNELING; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SUBSTRATES;

CONDUCTION BAND DISCONTINUITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032098616     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00098-0     Document Type: Article

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