Electrical properties of molecular beam epitaxially grown AlxGa1-xSbyAs1-y and its application in InP-based high electron mobility transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1529-1535

  Cai, W Z ^a,b   Moshegov, N T ^a   Mayer, T S ^a   Miller, D L ^a  

^a The Pennsylvania State University   (United States)

^b ON SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPOSITION EFFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

ALUMINUM GALLIUM ANTIMONY ARSENIDE; INDIUM ALUMINUM ARSENIDE; MARTIN MODEL SOLID THEORY; QUATERNARY ALLOYS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035535349     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1376382     Document Type: Conference Paper

References (22)

1. A.-B. Chen and A. Sher, Semiconductor Alloy: Physics and Materials Engineering (Plenum, New York, 1995).
2. J. L. Lazzari, J. L. Leclercq, P. Grunberg, A. Joullie, B. Lambert, D. Barbusse, and R. Fourcade, J. Cryst. Growth 123, 465 (1992).
3. H. Sakaki, L. L. Chang, R. Ludeke, C.-A. Chang, G. A. Sai-Halasz, and L. Esaki, Appl. Phys. Lett. 31, 211 (1977).
4. S. Loualiche, A. Le Corre, S. Salaun, J. Caulet, B. Lambert, M. Gauneau, D. Lecrosnier, and B. Deveaud, Appl. Phys. Lett. 59, 423 (1991).
5. D. Docter, M. Matloubian, C. Nguyen, S. Bui, and C. Ngo, 40th Electronic Material Conference, 1998, Charlottesville, VA (unpublished).
6. C. G. van de Walle, Phys. Rev. B 39, 1871 (1989).
7. E. T. Yu, J. O. McCaldin, and T. C. McGill, Solid State Phys. 46, 1 (1992).
8. S. Adachi, J. Appl. Phys. 61, 4869 (1987).
9. M. P. C. M. Krijn, Semicond. Sci. Technol. 6, 27 (1991).
10. See, W. Z. Cai and D. L. Miller, J. Appl. Phys. (submitted);
11. W. Z. Cai, Ph.D. dissertation, The Pennsylvania State University, 2000.
12. Y. Nakata, Y. Sugiyama, T. Inata, O. Ueda, S. Sasa, S. Muto, and T. Fujii, Mater. Res. Soc. Symp. Proc. 198, 289 (1990).
13. J. F. Klem and S. R. Kurtz, J. Cryst. Growth 111, 628 (1991).
14. K. Yoshimatsu, Y. Kawamura, H. Kurisu, A. Kamada, H. Naito, and N. Inoue, J. Cryst. Growth 188, 328 (1998).
15. Y. Nakata, Y. Sugiyama, O. Ueda, S. Sasa, T. Fujii, and E. Miyauchi, J. Cryst. Growth 99, 311 (1990).
16. H. C. Kuo, B. G. Moser, H. Hsia, Z. Tang, M. Feng, G. Stillman, C. H. Lin, and H. Chen, J. Vac. Sci. Technol. B 17, 1139 (1999).
17. S. Fujita, S. Naritsuka, T. Noda, A. Wagai, and Y. Ashizawa, J. Appl. Phys. 73, 1284 (1993).
18. I. Poole, M. E. Lee, M. Missous, and K. E. Singer, J. Appl. Phys. 62, 3988 (1987).
19. W. Mason and J. R. Waterman, J. Appl. Phys. 84, 1426 (1998).
20. J. S. Best, Appl. Phys. Lett. 34, 522 (1979).
21. M. Missous, W. S. Truscott, and K. E. Singer, J. Appl. Phys. 68, 2239 (1990).
22. c, we think that the carrier transport is probably dominated by thermionic emission in this temperature range. At higher temperatures there exist a sufficient number of energetic electrons to overcome the barrier height, and consequently the current may be dominated by drift in the insulator layer. Moreover, defect-assisted transport may also be responsible for the diodes' high-temperature behavior.