10Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs

Electronics Letters

Volumn 33, Issue 19, 1997, Pages 1653-1654

  Hurm, V ^a   Benz, W ^a   Bronner, W ^a   Dammann, M ^a   Jakobus, T ^a   Kaufel, G ^a   Kohler K ^a   Lao, Z ^a   Ludwig, M ^a   Raynor, B ^a   Rosenzweig, J ^a   Schlechtweg, M ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Gallium arsenide; High electron mobility transistors

Indexed keywords

BANDWIDTH; GATES (TRANSISTOR); MONOLITHIC INTEGRATED CIRCUITS; PHOTODIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

PHOTORECEIVERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031235087     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971072     Document Type: Article

References (5)

1. HURM, V., BENZ, W., BERROTH, M., BRONNER, W., FINK, T., HAUPT, M., KÖHLER, K., LUDWIG, M., RAYNOR, B., and ROSENZWEIG, J.: '10Gbit/S long-wavelength monolithic integrated optoelectronic receiver grown on GaAs', Electron. Lett., 1996, 32, (4), pp. 391-392
2. HURM, V., BENZ, W., BERROTH, M., BRONNER, W., FINK, T., HAUPT, M., KÖHLER, K., LUDWIG, M., RAYNOR, B., and ROSENZWEIG, J.: '10Gbit/S long wavelength monolithic integrated optoelectronic receiver grown on GaAs'. IPRM'96 Conf. Proc, 1996, pp. 435-438
3. 1-x-yAs buffer layers on GaAs', Appl. Phys. Lett., 1996, 69, (3), pp. 412-414
4. RAZEGHI, M., RAMDANI, J., VERRIELE, H., DECOSTER, D., CONSTANT, M., and VANBREMEERSCH, J.: 'Planar monolithic integrated photoreceiver for 1.3-1.55μm wavelength applications using GaInAs-GaAs heteroepitaxies', Appl. Phys. Lett., 1986, 49, (4), pp. 215-217
5. MIHASHI, Y., GOTO, K., ISHIMURA, E., MIYASHITA, M., SHIMURA, T., NISHIGUCHI, H., KIMURA, T., SHIBA, T., and OMURA, E.: 'Long-wavelength receiver optoelectronic integrated circuit on 3-inch-diameter GaAs substrate grown by InP-on-GaAs heteroepitaxy', Jpn. J. Appl. Phys., 1994, 33, (5A), pp. 2599-2604 (Part 1)