A high-speed ITO-InAlAs-InGaAs schottky-barrier photodetector

IEEE Photonics Technology Letters

Volumn 9, Issue 10, 1997, Pages 1388-1390

  Wohlmuth, W A ^a   Seo, J W ^c   Fay, P ^b   Caneau, C ^d   Adesida, I ^b  

^a University of Notre Dame   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c Hong Ik University   (South Korea)

^d TELCORDIA TECHNOLOGIES   (United States)

Author keywords

Indium materials devices; Photodetectors; Photodiodes; Schottky diodes; Semiconductor radiation detectors

Indexed keywords

BANDWIDTH; CURRENT DENSITY; PHOTODIODES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

INDIUM TIN OXIDE (ITO);

PHOTODETECTORS;

EID: 0031259201     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.623272     Document Type: Article

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