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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4288, Issue , 2001, Pages 163-170

Monolithic integration of GaInAs/InP quantum well infrared photodetectors on Si substrate

(2) Erdtmann, M a Razeghi, M a

a NORTHWESTERN UNIVERSITY (United States)

Author keywords

GaInAs; InP; MOCVD; Optoelectronic integration; Quantum well infrared photodetector; Si substrate

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; INTEGRATED OPTOELECTRONICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLITHIC INTEGRATED CIRCUITS; MORPHOLOGY; OPTIMIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS;

LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC INTEGRATION; QUATUM WELL PHOTODETECTORS; SEMICONDUCTING GALLIUM INDIUM ARSENIDE;

INFRARED DETECTORS;

EID: 0034870086 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.429426 Document Type: Conference Paper

Times cited : (1)

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