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Volumn 27, Issue 7, 1998, Pages 858-865

Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate

(24)  Sengupta, D K a,c   Weisman, M B b   Feng, M a   Chuang, S L a   Chang, Y C b   Cooper, L b   Adesida, I a   Bloom, I b,f   Hsieh, K C a   Fang, W a   Malin, J I a,g   Curtis, A P a   Horton, T a,h   Stillman, G E a   Gunapala, S D c   Bandara, S V c   Pool, F c   Liu, J K c   Mckelvey, M c   Luong, E c   more..


Author keywords

Dark current characteristics; Peak response wavelength; Quantum efficiency; Quantum well infrared photodetectors (QWIPs); Rapid thermal annealing

Indexed keywords


EID: 0008812328     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0110-7     Document Type: Article
Times cited : (1)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.