GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates

Applied Physics Letters

Volumn 71, Issue 1, 1997, Pages 78-80

  Sengupta, D K ^a   Fang, W ^a   Malin, J I ^a   Li, J ^a   Horton, T ^a   Curtis, A P ^a   Hsieh, K C ^a   Chuang, S L ^a   Chen, H ^a   Feng, M ^a   Stillman, G E ^a   Li, L ^b   Liu, H C ^b   Bandara, K M S V ^c   Gunapala, S D ^c   Wang, W I ^d  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^d Department of Earth and Environmental Sciences   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

ABSOLUTE RESPONSIVITY; DARK CURRENT; SPECTRAL RESPONSE;

INFRARED DETECTORS;

EID: 0031558167     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119473     Document Type: Article

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