Equipment simulation of SiGe heteroepitaxy: Model validation by ab initio calculations of surface diffusion processes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 935-941

  Hierlemann, M ^a   Werner, C ^a   Spitzer, A ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5844238590     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589511     Document Type: Article

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