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Journal of Electronic Materials

Volumn 26, Issue 7, 1997, Pages 873-877

Material properties of Pb1-xSnxSe epilayers on Si and their correlation with the performance of infrared photodiodes

(5) Fach, A a John, J a Muller P a Paglino, C a Zogg, H a

a ETH ZURICH (Switzerland)

Author keywords

Buffer layer; CaF2; Dislocation densities; PbSnSe; Si substrates

Indexed keywords

BUFFER LAYERS; THREADING DISLOCATION DENSITIES;

ANNEALING; CALCIUM COMPOUNDS; CRACK PROPAGATION; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); HALL EFFECT; INFRARED DEVICES; PHOTODIODES; SEMICONDUCTOR DEVICE MODELS; SILICON WAFERS;

LEAD COMPOUNDS;

EID: 0031192935 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-997-0266-6 Document Type: Article

Times cited : (25)

References (13)

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4
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5
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- "Microstrip 2001"-solution from Olin Hunt, etching time up to 4 min at 55°C.

6
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