Schottky-barrier fluctuations in Pb1-xSnxSe infrared sensors

Journal of Applied Physics

Volumn 80, Issue 12, 1996, Pages 7138-7143

  Paglino, C ^a   Fach, A ^a   John, J ^a   Muller P ^a   Zogg, H ^a   Pescia, D ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001625499     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363735     Document Type: Article

References (11)

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3. H. Zogg, S. Blunier, T. Hoshino, C. Maissen, J. Masek, and A. N. Tiwari IEEE Trans. Electron Devices 38, 1110 (1991).
4. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
5. Y. P. Hsieh and H. C. Card, IEEE Trans. Electron Devices ED-29, 1414 (1982).
6. O. Dos Santos, V. Mathet, C. Fau, S. Charar, P. Collot, F. Nguyen-Van-Dau, and A. Obadi Phys. Status Solidi A 148, 475 (1995).
7. J. H. Werner and H. H. Güttler, J. Appl. Phys. 69, 1522 (1991).
8. C. Paglino, Ph.D. thesis No. 11741, ETH Zürich, 1996.
9. Metal-Semiconductor Schottky Barrier Junctions and Their Applications edited by B. L. Sharma (Plenum, New York, 1984).
10. g(T).
11. A. Fach, Ph.D. thesis No. 11682, ETH Zürich, 1996.