Heteroepitaxial 96 × 128 lead chalcogenide on silicon infrared focal plane array for thermal imaging

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4369, Issue , 2001, Pages 405-411

  Alchalabi, Karim ^a   Zimin, Dmitri ^a   Zogg, Hans ^a   Buttler, Werner ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Focal plane array; Heteroepitaxy; Infrared; Lead chalcogenide; Monolithic; Silicon substrate

Indexed keywords

ALUMINUM; CRYSTAL LATTICES; EPITAXIAL GROWTH; INFRARED IMAGING; METALLIZING; MOLECULAR BEAM EPITAXY; OPTICAL SENSORS; SCANNING; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON; THERMAL EXPANSION; TRANSISTORS;

ELECTRONIC SCANNING; HETEROEPITAXY; INFRARED FOCAL PLANE ARRAY; LEAD CHALCOGENIDES; PHOTOVOLTAIC SENSORS; SILICON SUBSTRATE;

INFRARED DETECTORS;

EID: 0035761529     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.445303     Document Type: Conference Paper

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