Fabrication of strain-balanced Si0.73Ge0.27/Si-distributed Bragg reflectors on Si substrates for optical device applications

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 1051-1054

  Kawaguchi, K ^a   Koh, S ^a   Shiraki, Y ^b   Zhang, J ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Distributed Bragg reflector; SiGe; Strain balanced structure

Indexed keywords

LIGHT MODULATION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; STRAIN; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

DISTRIBUTED BRAGG REFLECTOR (DBR);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0036492703     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00300-4     Document Type: Article

References (10)