Fabrication of strain-balanced Si0.73Ge0.27/Si distributed bragg reflectors on Si substrates

Applied Physics Letters

Volumn 79, Issue 4, 2001, Pages 476-478

  Kawaguchi, K ^a   Koh, S ^a   Shiraki, Y ^a   Zhang, J ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035939402     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1385196     Document Type: Article

References (13)

1. R. Kuchibhotla, J. C. Campbell, J. C. Bean, L. Peticolas, and R. Hull, Appl. Phys. Lett. 62, 2215 (1991).
2. S. Fukatsu, J. Mater. Sci. 6, 341 (1995).
3. J. Christopher Dries, M. R. Gokhale, K. John Thomson, S. R. Forrest, and R. Hull, Appl. Phys. Lett. 73, 2263 (1998).
4. S. Maimon, G. M. Cohen, E. Finkman, G. Bahir, D. Ritter, and S. E. Schacham, Appl. Phys. Lett. 73, 800 (1998).
5. X. S. Jiang and P. K. L. Yu, Appl. Phys. Lett. 65, 2536 (1994).
6. T. Fukunaga, M. Wada, and T. Hayakawa, Appl. Phys. Lett. 69, 248 (1996).
7. K. Kawaguchi, Y. Shiraki, N. Usami, J. Zhang, N. J. Woods, G. Breton, and G. Parry, Appl. Phys. Lett. (to be published).
8. J. M. Hartmann, B. Gallas, J. Zhang, J. J. Harris, and B. A. Joyce, J. Appl. Phys. 86, 845 (1999).
9. C. Bocchi, A. Bosacchi, C. Ferrari, S. Franchi, P. Franzosi, R. Magnanimi, and L. Nasi, J. Cryst. Growth 165, 8 (1996).
10. In Properties of Silicon Germanium and SiGe:Carbon, edited by E. Kasper and K. Lyutovich (INSPEC, IEE, United Kingdom, 2000).
11. F. Lu, C. H. Perry, F. Namavar, N. L. Rowell, and R. A. Soref, Appl. Phys. Lett. 63, 1243 (1993).
12. J.-J. Ho, Y. K. Fang, K.-H. Wu, and C. S. Tsai, Appl. Phys. Lett. 70, 826 (1997).
13. T. Saka, M. Hirotani, T. Kato, H. Susawa, and N. Yamauchi, J. Appl. Phys. 73, 380 (1992).