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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 1048-1054

Reliable two-dimensional carrier profiling by scanning spreading resistance microscopy on InP-based devices with fast quantification procedure

(4) Xu, Ming Wei a Eyben, Pierre a Hantschel, Thomas c Vandervorst, Wilfried b

a IMEC (Belgium)

b UNIVERSITY OF LEUVEN (Belgium)

c PALO ALTO RESEARCH CENTER (United States)

Author keywords

2 D carrier profiling; Atomic force microscopy; InP; SSRM; Tip induced oxidation

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARGE CARRIERS; DIFFUSION; OXIDATION;

SCANNING SPREADING RESISTANCE MICROSCOPY (SSRM);

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0036478756 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.1048 Document Type: Conference Paper

Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.