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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1094-1097

Temperature dependence of luminescence decay time of InP quantum disks

(6) Okuno, Tsuyoshi a Ren, Hong Wen b Sugisaki, Mitsuru b Nishi, Kenichi c Sugou, Shigeo b,c Masumoto, Yasuaki a,b

a UNIVERSITY OF TSUKUBA (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c NEC CORPORATION (Japan)

Author keywords

GaInP; InP; Photoluminescence; Quantum disks; Radiative lifetime; Self assembled quantum dots

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS; THERMAL VARIABLES MEASUREMENT;

LATERAL WIDTHS; LUMINESCENCE DECAY TIME; QUANTUM DISKS; RADIATIVE LIFETIME; SELF ASSEMBLED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032662412 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.1094 Document Type: Article

Times cited : (4)

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