Sharp photoluminescence lines of InAs quantum dot embedded in GaAs mesa

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1325-1330

  Sugisaki, M ^a   Ren, H W ^a   Sugou, S ^a,b   Nishi, K ^b   Masumoto, Y ^a,c  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b NEC CORPORATION   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

INDIUM ARSENIDE; POWER DEPENDENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032118559     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00025-2     Document Type: Article

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