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Volumn 38, Issue 1 B, 1999, Pages 507-510
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Highly Uniform and Small InP/GaInP Self-Assembled Quantum Dots Grown by Metal-Organic Vapor Phase Epitaxy
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Author keywords
GaInP; GaP; InP; Interface; Metal organic vapor phase epitaxy (MOVPE); Photoluminescence (PL); Self assembled quantum dots (SADs)
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Indexed keywords
METALLORGANIC VAPOR PHASE EPITAXY;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR GROWTH;
SELF-ASSEMBLED QUANTUM DOTS (SAD);
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0032615392
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.38.507 Document Type: Article |
Times cited : (13)
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References (12)
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