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Volumn 38, Issue 1 B, 1999, Pages 507-510

Highly Uniform and Small InP/GaInP Self-Assembled Quantum Dots Grown by Metal-Organic Vapor Phase Epitaxy

Author keywords

GaInP; GaP; InP; Interface; Metal organic vapor phase epitaxy (MOVPE); Photoluminescence (PL); Self assembled quantum dots (SADs)

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

EID: 0032615392     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.507     Document Type: Article
Times cited : (13)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.