Imaging and single dot spectroscopy of InP self-assembled quantum dots

Journal of Luminescence

Volumn 87, Issue , 2000, Pages 40-45

  Sugisaki, Mitsuru ^a   Ren, Hong Wen ^a   Nair, Selvakumar V ^a   Lee, Jeong Sik ^a   Sugou, Shigeo ^a,b   Okuno, Tsuyoshi ^c   Masumoto, Yasuaki ^a,c  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b NEC CORPORATION   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORESCENCE; IRRADIATION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES; TEMPERATURE;

GALLIUM INDIUM PHOSPHIDE; INFRARED LASER BEAM IRRADIATION; MACROPHOTOLUMINESCENCE; SELF ASSEMBLED QUANTUM DOTS; SINGLE DOT SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033737556     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(99)00213-6     Document Type: Article

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