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Journal of Materials Science

Volumn 31, Issue 9, 1996, Pages 2317-2324

Crystallographic Shear Planes in nanocrystalline SnO2 thin films by high-resolution transmission electron microscopy

(6) Zheng, J G a,d Pan, Xiaoqing c Schweizer, M b Weimar, U b Gopel W b Ruhle M c

a NANJING UNIVERSITY (China)

b UNIVERSITY OF TÜBINGEN (Germany)

c MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS (Germany)

d UNIVERSITY OF BRISTOL (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ATOMIC STRUCTURE; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); FILM PREPARATION; NANOSTRUCTURED MATERIALS; SEMICONDUCTING FILMS; THIN FILMS;

CRYSTALLOGRAPHIC SHEAR PLANES; DISPLACEMENT VECTORS; ELECTRON BEAM EVAPORATION; PARTIAL DISLOCATIONS; TIN DIOXIDE;

SEMICONDUCTING TIN COMPOUNDS;

EID: 0030145309 PISSN: 00222461 EISSN: None Source Type: Journal
DOI: 10.1007/BF01152940 Document Type: Article

Times cited : (10)

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