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Volumn 205, Issue 1-2 SPEC. ISS., 1996, Pages 91-108

Femtosecond time-resolved photoemission study of hot electron relaxation at the GaAs( 100) surface

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0002531864     PISSN: 03010104     EISSN: None     Source Type: Journal    
DOI: 10.1016/0301-0104(95)00328-2     Document Type: Article
Times cited : (55)

References (48)
  • 1
    • 0024902520 scopus 로고
    • J. Shah, Solid State Electron. 32 (1989) 1051. In addition, see Semiconductors probed by ultrafast laser spectroscopy, Vols. I and II, ed. R.R. Alfano (Academic Press, Orlando, 1984).
    • (1989) Solid State Electron. , vol.32 , pp. 1051
    • Shah, J.1
  • 26
    • 0000376485 scopus 로고
    • J. Bokor, Science 246 (1989) 1130.
    • (1989) Science , vol.246 , pp. 1130
    • Bokor, J.1
  • 31
    • 0041129115 scopus 로고    scopus 로고
    • Gary Wicks at the Molecular Beam Epitaxial Laboratory, The Institute of Optics, University of Rochester, Rochester, NY 14627
    • Gary Wicks at the Molecular Beam Epitaxial Laboratory, The Institute of Optics, University of Rochester, Rochester, NY 14627.
  • 41
    • 0040535126 scopus 로고    scopus 로고
    • It should be noted that the high electronic temperature estimated for this data is significantly higher than our previous studies of metals. The differences lies in the density of electronic states which determines the temperature
    • It should be noted that the high electronic temperature estimated for this data is significantly higher than our previous studies of metals. The differences lies in the density of electronic states which determines the temperature.
  • 42
    • 0039350007 scopus 로고
    • X. Zhou and T.Y. Hsiang, J. Appl. Phys. 67 (1990) 7399; X. Zhou, T.Y. Hsiang and R.J.D. Miller, J. Appl. Phys. 66 (1989) 3066.
    • (1990) J. Appl. Phys. , vol.67 , pp. 7399
    • Zhou, X.1    Hsiang, T.Y.2


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